We report on a new design of terahertz quantum cascade laser based on asingle, potential-inserted quantum well active region. The quantum wellproperties are engineered through single monolayer InAs inserts. The modelingis based on atomistic, spds* tight-binding calculations, and performances arecompared to that of the classical three-well design. We obtain a 100% increaseof the oscillator strength per unit length, while maintaining a high, nearlytemperature-independent contrast between phonon-induced relaxation times of theupper and lower lasing states. The improved performances are expected to allowTHz lasing at room temperature.
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